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Methods and devices for optimized digital and analog CMOS transistor performance in deep submicron technology
Methods and devices for optimized digital and analog CMOS transistor performance in deep submicron technology
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机译:在深亚微米技术中优化数字和模拟CMOS晶体管性能的方法和设备
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摘要
High performance digital transistors (140) and analog transistors (144, 146) are formed at the same time. The digital transistors (140) include first pocket regions (134) for optimum performance. These pocket regions (134) are masked from at least the drain side of the analog transistors (144, 146) to provide a flat channel doping profile on the drain side. Second pocket regions (200) may be formed in the analog transistors. The flat channel doping profile provides high early voltage and higher gain.
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