Optimization of LPCVD Nitride deposition conditions for Non Volatile Memory inter poly dielectric applications

摘要

Dichlorosilane (DCS) based LPCVD nitride deposited in situ on HTO is evaluated for a range of process conditions. Investigated are the influence of the initial nucleation on the surface roughness and the reoxidation resistance. A comparison is made with nitride deposited on ex situ HTO, wet oxide and native oxide. It is shown that nitride deposited in situ on HTO with conditions that ensure a good nucleation gives the smoothest surface and has the best reoxidation resistance. These properties are important for application of silicon nitride as interpoly dielectric in Non Volatile Memories.