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Transistor level synthesis for static CMOS combinational circuits

机译:静态CMOS组合电路的晶体管电平合成

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This paper introduces a novel framework to synthesize static CMOS circuits at the transistor level. A new class of binary decision diagrams (BDDs) which represent inverting Boolean functions, called Transistor Mapped BDDs (TM-BDDs), is used in the synthesis process. There is a one-to-one correspondence between a transistor netlist and its TMBDD. Nodes in a TM-BDD represent gate inputs and the edges represent the transistors in the netlist. TM-BDDs can be optimized using BDD operations, and the data structure can retain device aspect ratios and geometries for performance optimization. The synthesis process involves a transformation from logic functions to transistor netlists using TM-BDDs. We show how a transistor netlist can be automaticallygenerated during a depth-first traversal on a TMBDD. The synthesis process is not only independent of any library, but also capable of generating a cell library for a particular circuit. Experimental results demonstrating the reduction of transistorcounts are presented.
机译:本文介绍了一种新颖的框架,用于在晶体管水平上合成静态CMOS电路。在合成过程中使用代表名为晶体管映射BDDS(TM-BDDS)的反相布尔函数的新类二进制决策图(BDD)。晶体管网表及其TMBDD之间存在一对一的对应关系。 TM-BDD中的节点表示栅极输入,边缘表示网表中的晶体管。 TM-BDD可以使用BDD操作进行优化,数据结构可以保留用于性能优化的设备纵横比和几何形状。合成过程涉及使用TM-BDD从逻辑函数到晶体管网手册的转换。我们展示了如何在TMBDD上的深度首先遍历期间自动启动晶体管网手册。合成过程不仅独立于任何文库,而且还能够为特定电路产生单元库。提出了展示晶体管控制减少的实验结果。

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