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Transistor level synthesis for static CMOS combinational circuits

机译:静态CMOS组合电路的晶体管级合成

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This paper introduces a novel framework to synthesize static CMOS circuits at the transistor level. A new class of binary decision diagrams (BDDs) which represent inverting Boolean functions, called transistor mapped BDDs (TM-BDDs), is used in the synthesis process. There is a one-to-one correspondence between a transistor netlist and its TM-BDD. Nodes in a TM-BDD represent gate inputs and the edges represent the transistors in the netlist. TM-BDDs can be optimized using BDD operations, and the data structure can retain device aspect ratios and geometries for performance optimization. The synthesis process involves a transformation from logic functions to transistor netlists using TM-BDDs. We show how a transistor netlist can be automatically generated during a depth-first traversal on a TM-BDD. The synthesis process is not only independent of any library, but also capable of generating a cell library for a particular circuit. Experimental results demonstrating the reduction of transistor counts are presented.
机译:本文介绍了一种在晶体管级合成静态CMOS电路的新颖框架。在合成过程中,使用了一类新的代表反相布尔函数的二进制决策图(BDD),称为晶体管映射BDD(TM-BDD)。晶体管网表与其TM-BDD之间存在一一对应的关系。 TM-BDD中的节点表示栅极输入,边缘表示网表中的晶体管。可以使用BDD操作来优化TM-BDD,并且数据结构可以保留设备的宽高比和几何形状以进行性能优化。合成过程包括使用TM-BDD从逻辑功能到晶体管网表的转换。我们展示了如何在TM-BDD上进行深度优先遍历的过程中自动生成晶体管网表。合成过程不仅独立于任何库,而且能够为特定电路生成单元库。实验结果证明了晶体管数量的减少。

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