The effect of heavy boron doping on oxygen precipitation in Czochralski silicon substrates of epitaxial wafers has been studied with transmission electron microscopy observations and a preferential etching method. Prolonged isothermal annealing between 700 deg C and 1000 deg C for up to 700 h was performed on p/p+ (5-20 m#OMEGA#cm) and p/p-(10 #OMEGA#cm) wafers. It was found that, with an increase in boron concentration, (i) the precipitate density increased, and (ii) the precipitates could nucleate at a higher temperature. The growth process of platelet precipitates was also investigated and compared with the process in p- polished wafers. It was confirmed that (i) precipitate growth rate in p/p+ wafers was higher than that in p- wafers, and (ii) precipitate nucleation in p/p- wafers was delayed compared with p/p+ wafers. The precipitate growth in p/p+ and p/p- wafers was analyzed to be reaction-limited, which differed from the diffusion-limited growth in p- wafers.
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机译：用透射电子显微镜观察和优先蚀刻方法研究了重硼掺杂对外延晶片的Czochralski硅基衬底中的氧气沉淀的影响。在P / P +（5-20m＃Omega＃cm）和P / P-（10＃Omega＃cm）晶片上进行700℃和1000℃至700小时的延长等温退火。结果发现，随着硼浓度的增加，（i）沉淀密度增加，并且（ii）沉淀物可以在更高的温度下成核。还研究了血小板沉淀物的生长过程，并与P抛光晶片中的方法进行了比较。确认（i）p / p +晶片中的生长速率高于p-晶片中的生长速率，并且与p / p +晶片相比，在p / p晶片中延迟p / p晶片中的沉淀肠道。分析p / p +和p / p-晶片中的沉淀生长以进行反应 - 限制，其与P-晶片中的扩散有限的生长不同。
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