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OXYGEN PRECIPITATION IN HEAVILY DOPED SILICON WAFERS SLICED FROM INGOTS GROWN BY THE CZOCHRALSKI METHOD
OXYGEN PRECIPITATION IN HEAVILY DOPED SILICON WAFERS SLICED FROM INGOTS GROWN BY THE CZOCHRALSKI METHOD
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机译:用直拉法从长成的块体切成的重掺杂硅片中的氧沉淀
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摘要
A method of controlling oxygen precipitation on a single crystal silicon wafer having a wafer resistivity of less than about 10 milliohm-cm is provided such that the wafer has a uniformly high oxygen precipitation behavior from the central axis to the circumferential edge. Single crystal silicon wafers include additional dopants selected from carbon, arsenic and antimony.
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