OXYGEN PRECIPITATION IN HEAVILY DOPED SILICON WAFERS SLICED FROM INGOTS GROWN BY THE CZOCHRALSKI METHOD

摘要

A method of controlling oxygen precipitation on a single crystal silicon wafer having a wafer resistivity of less than about 10 milliohm-cm is provided such that the wafer has a uniformly high oxygen precipitation behavior from the central axis to the circumferential edge. Single crystal silicon wafers include additional dopants selected from carbon, arsenic and antimony.