HICUM AND BSIM3V3.2.4 NON LINEAR BEHAVIOR VALIDATION IN RF BICMOS SiGeC 0.25μm PROCESS FOR BIPOLAR AND CMOS TRANSISTORS

摘要

This paper deals with HiCUM [1] and BSIM3V3.2.4 [2] large signal validation. On contrary with traditional approach that deals with output signal at fundamental and harmonics frequencies [3], this study focuses on IIP1 and IIP3 figures of merit (FoM). In this way, two input power tones are injected at 2 GHz and 2.1 GHz in respect with the W-CDMA receive band. Thus, not only IIP1 could be compared between simulations and measurements, but also IIP3 due to intermodulations. This analysis is based on BiCMOS SiGeC 0.25μm process for RF bipolar and CMOS transistors measurements. On the one hand, an in-house load pull system based on Maury microwaves tuners is described. This bench is used to measure the DUTs at various bias points with source and load impedances close to 50 Ω. These impedances are characterized at fundamental and at carefully chosen out-of-band frequencies. On the other hand, HiCUM and BSIM3V3.2.4 simulations are compared to measurements. DC parameters and out-of-band impedances importance is highlighted. Accurate DC parameters enable obviously a right gain simulation but above all it leads to a suitable IM3 level, and thus to a precise IIP3. Moreover, it is demonstrated that H2, H3, IM2 and IM3 out-of-band impedances characterization is a necessary and sufficient criterion to validate IIP3 FoM. Finally, it will be shown that HiCUM and BSIM3V3.2.4 models allow an accurate distortion phenomena description in terms of IIP1 and IIP3.