High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- $muhbox{m}$ BiCMOS Process for RF-Power Applications

摘要

The optimization of the small and large signal performances of a radio frequency (RF)-LDMOS is presented via the achievement of a novel LDMOS architecture. Specific process steps are introduced into a 0.25- $muhbox{m}$ BiCMOS technology and precisely described to realize a fully salicided gate RF-LDMOS architecture. Significant improvement is obtained on the small-signal— $f_{T}$ and $F_{max}$ —and power performances while maintaining good dc characteristics.