Compressively strained GaInP/AlGaInP metal clad structure for 650 nm laser diode

机译：用于650nm激光二极管的压缩应变GainP / Algainp金属包层结构

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The compressively strained MQW structures for a 650 nm laser diode were investigated. The high performance was obtained with a metal clad ridge structure employing strained MQWs.

机译：研究了用于650nm激光二极管的压缩紧张的MQW结构。使用采用紧张的MQWS的金属包覆脊结构获得高性能。

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《IEEE Lasers and Electro-Optics Society Annual Meeting》|1995年||共2页
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Oh M.; Park H.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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4. Compressively strained GaInP/AlGaInP metal clad structure for 650 nm laser diode [C] . Oh, M., Park, . 1995

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Compressively strained GaInP/AlGaInP metal clad structure for 650 nm laser diode

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