THE MEASUREMENT AND RESEARCH OF THERMAL NONUNIFORMITY OF GaAs MESFET BY ELECTRICAL METHOD

摘要

In an effort to find out a method to detect GaAs MESFET thermal nonuniformity inside device, the electrical average temperature.Tavg of device channel was measured. Under unchanged power and altering Vds it is found that Tavg is more sensitive to Vds and the increase of Vds gives rise to Tavg rising. By building a simpler hot spot model, Tavg is calculated with the variation of temperature distribution. By introducing ratio factors, it is possible to measure nonuniformity of device.