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Acid-catalyzed single-layer resists for ArF lithography

机译:酸催化的单层抗蚀剂用于ARF光刻

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A positive-tone single-layer resist for use with 193 nm radiation has been developed. The system contains a terpolymer of methyl methacrylate, methacrylic acid, and $tau@-butyl methacrylate, along with a photoacid generator. The chemically amplified deprotection of the $tau@-butyl methacrylate into methacrylic acid increases the polarity of the resist and allows selective dissolution in metal-ion-free aqueous base solutions. The resist sensitivity is less than 10 mJ/cm$+2$/, and its inherent resolution is better than 0.1 $mu@m. These acrylate-based systems have potential for both lower cost and better environmental stability compared with the deep ultraviolet chemically amplified resists which use phenolic resins.
机译:已经开发出用于193nm辐射的正音单层抗蚀剂。该系统含有甲基丙烯酸甲酯,甲基丙烯酸和TAU @-丁基丁酯的三元共聚物,以及甲基丙烯酸丁酯以及光酸发生器。将甲基丙烯酸丁酯的丙烯酸丁酯的化学扩增的脱保护增加了甲基丙烯酸的极性,并允许在无离子水溶液中选择性溶解。抗蚀剂敏感性小于10 MJ / cm $ + 2 $ /,其固有分辨率优于0.1 $ MU @ M。与使用酚醛树脂的深紫外线化学放大抗性相比,这些基于丙烯酸酯的系统具有较低的成本和更好的环境稳定性。

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