首页> 外文会议>Conference on advances in resist technology and processing >Track oriented chemically-amplified resist processes for quarter-micron lithography
【24h】

Track oriented chemically-amplified resist processes for quarter-micron lithography

机译:轨道面向四分之一微米光刻的化学放大抗蚀剂工艺

获取原文
获取外文期刊封面目录资料

摘要

The establishment of standard resist processes are a primary requirement for the X-ray Lithography National Test Bed at the Center for X-ray Lithography. For this, experimental design is a necessary component of the methodology given the large parameter space associated with chemically amplified resists (CARs). The process development is carried out in three phases. DOX is applied to several steps in the development. The vacuum hot plate pre-bake, post-bake time, temperature and the exposure dose have the greatest effect on controlling the performance of the resist. Constraints are placed on the contrast, develop time and unexposed resist loss. The exposure dose needed to meet these requirements is obtained from the modified response surface of the bulk behavior. The final optimization is based on the CD control and side wall angle for quarter-micron features in resist. The process is run on a sampled basis in order to determine the control issues. Control limits are set from these data, and the process performance is determined.
机译:标准抗蚀剂的建立是X射线光刻中心的X射线光刻国家试验台的主要要求。为此,考虑到与化学放大抗蚀剂(汽车)相关的大参数空间,实验设计是方法的必要组件。过程开发是三个阶段进行的。 Dox适用于开发的几个步骤。真空热板预烘烤,后烘烤时间,温度和曝光剂量对控制抗蚀剂的性能具有最大的影响。限制被放置在对比度,发展时间和未曝光的抗蚀剂损失。满足这些要求所需的曝光剂量是从散装行为的修改响应表面获得的。最终优化基于抗蚀剂中四分之一微米特征的CD控制和侧壁角。该过程在采样的基础上运行,以确定控制问题。控制限制从这些数据设置,并确定过程性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号