Atomic Layer Etching and Selective Deposition Processes for Extreme Ultraviolet Lithography Resist Improvements

摘要

Methods and systems for reducing roughness of EUV resists and improving etched features are provided herein. The methods involve descuming the EUV resist, filling the divots of the EUV resist, and protecting the EUV resists with a cap. The resulting EUV resist has smoother features and increased selectivity to the underlying layer, which improves the quality of the etched features. Following etching of the underlying layer, the cap may be removed.