Improvement of DC, low frequency and reliability properties ofInAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layer

摘要

In this paper we report on the elimination of the kink effect andof the hot-electron degradation in InP-based HEMTs which results fromthe insertion of an InP etch stop layer on top of the InAlAs donorlayer. We attribute this improvement to the passivation, by means ofInP, of deep levels on the surface of the InAlAs, as demonstrated bytransconductance frequency dispersion measurements