Analysis of p+ poly Si double-gate thin-film SOI MOSFETs

摘要

The authors have fabricated planar p+ poly Sidouble-gate thin-film SOI (silicon-on-insulator) nMOSFETs using waferbonding. The fabricated devices have shown a transconductance, Gm, exceeding twice that of the single-gate SOI-MOSFET. It wasconfirmed that conduction in the double-gate SOI MOSFET originates froma fully flat potential and charge injection. An analytical modeldeveloped by the authors has displayed electrical characteristics thatagree well with those of the fabricated devices