SELF-ALIGNED SILICIDE-PROCESS OF LOW-RESISTANCE CONTACT FOR THIN-FILM SOIMOSFET

摘要

PROBLEM TO BE SOLVED: To provide a silicide treating method for thin-film SOI device. SOLUTION: The self-aligned silicide-process contains a step for attaching a metal or an alloy the gate, source and drain structures formed on an SOI film a step for forming a first alloy by reacting the metal or the alloy with the SOI film at a first temperature, a step, for selectively etching the nonreactive layer of the metal (or the alloy), a step for attaching an Si film on the first alloy, a step for forming a second alloy by reacting the Si film at the second temperature and a step for selectively etching the nonreactive layer of the Si film.