High quality InGaAs/InP and InAlAs/InP heterostructures beyond theMatthews-Blakeslee critical layer thickness

摘要

Mismatched epitaxial layers of InGaAs and InAlAs were grown on InPby molecular beam epitaxy. Double-crystal X-ray diffraction measurementsshow that the crystalline quality of the layers consistently remainsunperturbed to thicknesses up to 3-8 times the Matthews-Blakesleecritical layer thickness. The findings are applied to the growth ofhigh-performance mismatched InAlAs/InGaAs/InP heterostructurefield-effect transistors