High-responsivity, high-speed, and high-saturation-power performances of evanescently coupled photodiodes with partially p-doped photo-absorption layer

摘要

Electrical bandwidth, output saturation current (power), and responsivity performances are usually three trade-off parameters in the design of high-speed photodetectors. In this paper, we demonstrate a high performance evanescently coupled photodiode (ECPD) with the partially p-doped photo-absorption layer. As compared to the control ECPD with the traditional intrinsic photo-absorption layer, the demonstrated device can exhibit much higher output saturation current (power) and electrical bandwidth without sacrificing the quantum efficiency performance.