Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance

摘要

We demonstrate a Si/SiG-based edge-coupled photodiode that can achieve high-speed, high output power, and high responsivity performance at a wavelength of 830 nm for application to short-reach fiber communication. We incorporate a p-type-doped Si/Si_(0.5)Ge_(0.5)-based superlattice with a Si-based depletion layer to enhance the photoabsorption process and minimize the hole-trapping problem of the Si/SiGe multiple quantum well. An extremely high bandwidth-efficiency product performance (10 GHz, 276%, 27.6 GHz) and high peak output voltage (1.5 V) have been achieved simultaneously by operating this device in the avalanche regime.