Millimeter-wave low noise metamorphic HEMT amplifiers and deviceson GaAs substrates

摘要

An excellent 0.61 dB minimum noise figure and 11.8 dB associatedgain at 26 GHz, have been obtained for a InAlAs/InGaAs metamorphic HEMTon a GaAs substrate. Low-noise amplifiers show under 1.8 dB noise figurewith gain greater than 24 dB across 27-32 GHz