Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates

摘要

This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise figure with 11.8 dB of associated gain at 26 GHz. Using this MHEMT technology, two and three-stage Ka-band low-noise amplifiers (LNAs) have demonstrated >1.4-dB noise figure with 16 dB of gain and >1.7 with 26 dB of gain, respectively. The 32% In MHEMT device has overcome the >3.5-V drain bias limitation of other MHEMT power devices, showing a power density of 650 mW/mm at 35 GHz, with V/sub ds/=6 V.