Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30 to 60 InxGaAs Channels on GaAs Substrates

摘要

Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applications, where a high indium content channel is necessary for high performance. This paper will review the material properties, the processing, and the device and amplifier performance of metamorphic HEMTs with 30% to 60% indium channel content, with a focus on work done at Raytheon RF Components. 1.4W of output power at 44 GHz have been realized.