Low-noise and power AlGaPSb/GaInAs HEMTs and pseudomorphic HEMTs on GaAs substrate

摘要

An epitaxial structure (10) and method of manufacture for a field-effect transistor capable of low-noise and power applications. Preferably, the epitaxial structure (10) includes an N-type barrier layer (22) comprising a wide-gap semiconductor material having the formula Al1-yGayP0.71+zSb0.29-z.