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Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual

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1.GaAs IC Symposium. IEEE Gallium Arsenide Integrated CircuitSymposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369)

机译：GaAs IC论坛。 IEEE砷化镓集成电路座谈会。第21届年度。技术摘要1999（目录号99CH36369）
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
2.A highly integrated MMIC chipset for a 40 GHz MVDS transceiversubscriber terminal

机译：用于40 GHz MVDS收发器的高度集成的MMIC芯片组用户终端
- 作者：Dourlens C.;Couturier A.M.;Sevin R.;Quentin P.;Pons D.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
3.A 180-GHz MMIC sub-harmonic mixer based on InGaAs/InAlAs/InP HEMTdiodes

机译：基于InGaAs / InAlAs / InP HEMT的180 GHz MMIC次谐波混频器二极管
- 作者：Yon-Lin Kok;Huei Wang;Lai R.;Barsky M.;Sholley M.;Allen B.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
4.Fully-integrated 5/2 GHz GaAs MESFET transmitter MMIC forhigh-capacity wireless local area network applications

机译：完全集成的5/2 GHz GaAs MESFET发射器MMIC大容量无线局域网应用
- 作者：Weiner J.S.;Huan-Shang Tsai;Youn-Kai Chen;Busking E.;Tieman T.;Kruys J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
5.Millimeter-wave low noise metamorphic HEMT amplifiers and deviceson GaAs substrates

机译：毫米波低噪声变质HEMT放大器和设备在砷化镓衬底上
- 作者：Marsh P.;Kang S.;Wohlert R.;McIntosh P.M.;Hoke W.E.;McTaggart R.A.;Lardizabal S.M.;Leoni R.E. III;Whelan C.S.;Lemonias P.J.;Kazior T.E.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
6.Author Index

机译：作者索引
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
7.E-PHEMT for single supply, no drain switch, and high efficiencycellular telephone power amplifiers

机译：E-PHEMT用于单电源，无漏极开关和高效率蜂窝电话功率放大器
- 作者：Tkachenko Y.;Klimashov A.;Wei C.;Zhao Y.;Bartle D.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
8.Inclusion of topside metal heat spreading in the determination ofHBT temperatures by electrical and geometrical methods GaAs devices

机译：确定顶部金属的热量扩散。通过电学和几何学方法测量的HBT温度GaAs器件
- 作者：Yeats B.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
9.InP/GaAsSb/InP DHBTs with high f_T and f_MAXfor wireless communication applications

机译：f _{T 和f _{MAX 高的InP / GaAsSb / InP DHBT用于无线通信应用}}
- 作者：Bolognesi C.R.;Matine N.;Dvorak M.W.;Xu X.G.;Watkins S.P.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
10.Analysis of PAE 50 highly linear characteristics of new structuretransistor “self-aligned gate PHEMT” for W-CDMA application

机译：新结构的PAE 50％高线性特性分析W-CDMA应用的晶体管“自对准门PHEMT”
- 作者：Sasaki T.;Takada Y.;Tanabe Y.;Nitta T.;Kakiuchi Y.;Yoshimura M.;Fujieda R.;Suzuki T.;Kayano H.;Hirose M.;Kitaura Y.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
11.Status of metamorphic In_xAl_1-xAs/In_xGa_1-xAs HEMTs

机译：In _{x Al _{1-x As / In _{x的状态 Ga _{1-x 作为HEMT}}}}
- 作者：Cappy A.;Cordier Y.;Bollaert S.;Zaknoune M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
12.A 10 Gb/s optical transmitter module with a built-in modulatordriver IC and a receiver module with a built-in preamplifier IC

机译：具有内置调制器的10 Gb / s光发射机模块驱动器IC和带有内置前置放大器IC的接收器模块
- 作者：Yoshida N.;Ishizaka M.;Watanabe I.;Morie M.;Fujii M.;Wada S.;Numata K.;Fukuchi K.;Fukushima K.;Shimizu J.;Yamaguchi M.;Maeda T.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
13.A >25 PAE 0.2-6 GHz lumped power amplifier in a 18 GHz MESFETtechnology

机译：18 GHz MESFET中的> 25％PAE 0.2-6 GHz集总功率放大器技术
- 作者：Krishnamurthy K.;Rodwell M.J.W.;Long S.I.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
14.A CW 4 watt Ka-band power amplifier utilizing MMIC multi-chiptechnology

机译：利用MMIC多芯片的CW 4瓦Ka波段功率放大器技术
- 作者：Matsunaga K.;Miura I.;Iwata N.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
15.A GaAs +3V low noise integrated downconverter for C-bandapplications using MESFETs

机译：用于C波段的GaAs + 3V低噪声集成下变频器应用使用MESFET
- 作者：Trantanella C.;Blount P.;Shifrin M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
16.A 77 GHz GaAs pHEMT transceiver MMIC for automotive sensorapplications

机译：用于汽车传感器的77 GHz GaAs pHEMT收发器MMIC应用领域
- 作者：Tessmann A.;Verweyen L.;Neumann N.;Massler H.;Haydl W.H.;Hulsmann A.;Schlechtweg M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
17.A miniaturized MMIC analog phase shifter using twoquarter-wave-length transmission lines

机译：使用两个微型MMIC模拟移相器四分之一波长传输线
- 作者：Hayashi H.;Muraguchi M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
18.A high sensitivity 10 Gb/s DCFL limiting amplifier with 0.2 μmGaAs MESFETs

机译：具有0.2μm的高灵敏度10 Gb / s DCFL限幅放大器砷化镓MESFET
- 作者：Yamada H.;Murayama H.;Shiiba K.;Ichioka T.;Kimura T.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
19.Tunable linearity characteristics of a DC-3 GHz InP HBT activefeedback amplifier

机译：DC-3 GHz InP HBT有源的可调线性特性反馈放大器
- 作者：Kobayashi K.W.;Gutierrez-Aitken A.;Grossman P.C.;Yang L.;Kaneshiro E.;Block T.R.;Oki A.K.;Streit D.C.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
20.High-speed, low-power digital and analog circuits implemented inIBM SiGe BiCMOS technology

机译：高速，低功耗数字和模拟电路实现于IBM SiGe BiCMOS技术
- 作者：Fritz K.E.;Randall B.A.;Fokken G.J.;Walters W.L.;Lorsung M.J.;Nielsen A.D.;Prairie J.F.;Post D.J.;Greenberg D.R.;Gilbert B.K.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
21.High linearity K-band InP HBT power amplifier MMIC with 62.8 PAEat 21 GHz

机译：具有62.8％PAE的高线性K波段InP HBT功率放大器MMIC在21 GHz
- 作者：Yang L.W.;Kobayashi K.W.;Steit D.C.;Oki A.K.;Yen H.C.;Grossman P.C.;Block T.R.;Tran L.T.;Gutierrez-Aitken A.;Callejo L.G.;Macek J.;Maas S.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
22.High-gain transimpedance amplifier in InP-based HBT technology forthe receiver in 40 Gb/s optical-fiber TDM links

机译：基于InP的HBT技术的高增益互阻放大器40 Gb / s光纤TDM链路中的接收器
- 作者：Mullrich J.;Mullner E.;Jensen J.F.;Stanchina B.;Kardos M.;Thurner H.;Rein H.-M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
23.40 Gbit/s optical communications: InP DHBT technology, circuits andsystem experiments

机译：40 Gbit / s光通信：InP DHBT技术，电路和系统实验
- 作者：Godin J.;Andre P.;Benchimol J.L.;Berdaguer P.;Blayac S.;Burie J.R.;Desrousseaux P.;Duchenois A.M.;Kauffmann N.;Konczykowska A.;Riet M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
24.High power and gain at 35 GHz utilizing an InAlGaAs-In_0.32Ga_0.68As metamorphic HEMT

机译：利用InAlGaAs-In _{0.32在35 GHz时实现高功率和高增益 Ga _{0.68 作为变质HEMT}}
- 作者：Whelan C.S.;Hoke W.E.;McTaggart R.A.;Lyman P.S.;Marsh P.F.;Lichwala S.J.;Kazior T.E.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
25.Multi-throw plastic MMIC switches up to 6 GHz with integratedpositive control logic

机译：集成了高达6 GHz的多掷塑料MMIC开关正控制逻辑
- 作者：Smuk J.;Mahfoudi M.;Belliveau D.;Shifrin M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
26.Bias point dependence of the hot electron degradation ofAlGaAs/GaAs power HFETs

机译：偏置点对热电子降解的依赖性AlGaAs / GaAs功率HFET
- 作者：Menozzi R.;Dieci D.;Messori M.;Sozzi G.;Lanzieri C.;Canali C.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
27.Ramp-up of first SiGe circuits for mobile communications:positioning of SiGe vs. GaAs and silicon

机译：首款用于移动通信的SiGe电路的升级：SiGe与GaAs和硅的位置
- 作者：Klepser B.-U.;Klein W.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
28.An on-ledge Schottky potentiometer for the diagnosis of HBT emitterpassivation

机译：壁挂式肖特基电位计，用于诊断HBT发射器钝化
- 作者：Pingxi Ma;Zampardi P.;Liyang Zhang;Chang M.F.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
29.Status and roadmap of GaAs technology in Georgia, former SovietUnion

机译：前苏联格鲁吉亚砷化镓技术的现状和发展路线图联盟
- 作者：Khuchua N.P.;Gerasimov A.B.;Chikovani R.I.;Chakhnakia Z.D.;Khvedelidze L.V.;Melkadze R.G.;Bibilashvili A.P.;Mkheidze T.D.;Goderdzishvili G.I.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
30.Millimeter-wave monolithic GaAs IC interconnect and packagingtechnology trends in Japan

机译：毫米波单片GaAs IC互连和封装日本的技术趋势
- 作者：Ohata K.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
31.Novel low-cost process for 0.1-μm T-shaped gate of InGaP/InGaAs pseudomorphic hemt

机译：InGaP / InGaAs伪晶胞的0.1μmT形栅极的新型低成本工艺
- 作者：Sugiura M.;Morizuka K.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
32.Low temperature (LT) grown GaAs buffer layers for III-Vsemiconductor processes

机译：用于III-V的低温（LT）生长的GaAs缓冲层半导体工艺
- 作者：Weatherford T.R.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
33.Wide-bandgap-semiconductor wide-bandwidth wide-temperature-rangepower amplifiers

机译：宽带隙半导体宽带宽温度范围功率放大器
- 作者：Hwang J.C.M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
34.94/47 GHz regenerative frequency divider MMIC with low conversionloss

机译：具有低转换率的94/47 GHz再生分频器MMIC失利
- 作者：Kudszus S.;Haydl W.H.;Neumann M.;Hulsmann A.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
35.57 efficiency, wide dynamic range linearized heterojunctionFET-based power amplifier for wide-band CDMA handsets

机译：效率达57％，动态范围宽的线性化异质结基于FET的功率放大器，用于宽带CDMA手机
- 作者：Hau G.;Nishimura T.B.;Iwata N.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》
36.Injection-locked oscillator as frequency multiplier formillimeter-wave applications

机译：注入锁定振荡器作为倍频器毫米波应用
- 作者：The Linh Nguyen
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual》