A Study of Deep Silicon Etching for Power Device Fabrication

摘要

High density plasma etch equipment of NAURA has been widely used for power devices manufacture. For IGBT (Insulated Gate Bipolar Transistor) si-trench etch, NAURA proposes a practical process method for improving the trench profile, and develops an in-situ TCR (top corner rounding) process optimization method which simplifies the process flow of IGBT, improves the production efficiency, and saves the manufacturing cost. Test results show that the optimized process method can achieve comparable electrical performance of IGBT with conventional process.