High Pillar Doping Concentration for SiC Superjunction IGBTs

摘要

This paper is a theoretical study of the optimum doping concentration for the n and p pillars of a superjunction IGBT. As the concentration of the pillar for a silicon-carbide superjunction device increases up to 10 times higher than that of silicon, unipolar drift current in each pillar can be predominant over the bipolar action. The increased doping concentration effectively reduces the potential drop in the pillar for the on-state conduction.