Power semiconductor component used as an IGBT comprises a body with a region of lower doping concentration limited by a region of higher concentration which contains a stop zone

摘要

Power semiconductor component comprises a body (10) made from doped semiconductor material. The body consists of: a doped region (17) of conductivity type (p, n) and a relatively high doping concentration (n, n+, n++, p+, p++); a doped region (16) of conductivity type (n, p) and a lower doping concentration (n, n-, p, p-). The region of lower doping concentration is limited by the region of higher concentration which contains a stop zone (16'') of conductivity (n, p). The stop zone is arranged at a distance from a boundary surface (167) so that a partial region (16''') of lower doping concentration (n, n-, p, p-) is present between the stop zone and the boundary surface. In a transmission operation of the component, an electrical current passes through the regions of high and low doping concentrations including the partial region and the stop zone vertical to the boundary surface. Preferred Features: The distance from the stop zone to the boundary surface between the regions of high and low doping concentrations is 10-30 mu m.