The Study of SOI Split-drain Field-effect Hall Sensor in Partial Depletion Mode

摘要

The experimental results of Silicon on insulator split-drain field-effect Hall sensor (SOI SD FEHS) are presented. It is magnetic sensors based on metal-oxide-semiconductor- oxide-metal field-effect transistor structures with high magnetosensitivity in partial depletion mode. Such sensors have a number of advantages due to the expansion of the device functionality. A method of measuring the experiment was developed. Measurements were made at room temperature. As a result, the following curves were obtained: the voltage difference on the load resistances of the measuring circuit (ΔV) versus the gate voltage gate at room temperature, the dV versus the magnetic field, the amplitude of the peak versus the nominal load resistance, etc. Recalculating the voltage difference across the load resistances - ΔV to magnetosensitivity, the specific magnetosensitivity of SOI FEHS SD can reach values of 10^{5 V / A × T, which is significantly higher than any known Hall semiconductor elements..}