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Room temperature wafer scale bonding of electroplated Au patterns processed by surface planarization

机译:室温晶圆凝固电镀AU图案的表面平面化

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摘要

We demonstrate a newly-developed replication process of a surface shape from an atomically smooth master substrate onto electroplated Au patterns by a lift-off process using a thin sacrificial layer. An atomically smooth Au surface with a root mean square surface roughness of 0.8 nm could be replicated from the master substrate by this process. Then we examined its applicability to room-temperature Au-Au bonding in atmosphere. A high bonding strength of about 250 MPa was obtained. Fracture from the bulk of the Si substrates was observed after tensile tests, which was also the case for the thermocompression bonding at 200°C.
机译:我们通过使用薄的牺牲层,通过剥离过程从原子上光滑的母基板从原子平滑母基板的表面形状的新开发的复制过程。通过该方法可以从主基板复制具有0.8nm的根平均方形表面粗糙度的原子平滑的Au表面。然后,我们将其适用于在大气中的室温Au-Au键合。获得约250MPa的高键合强度。在拉伸试验后观察到来自SI底物的大部分的裂缝,其在200℃下的热压键合也是如此。

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