Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution

机译：热载流子应力模型：从降解动力学到陷阱分布演变

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A complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented. After having underlined the need for a power law with a low exponent for the aging kinetics and considered a high activation energy reflecting the single electron impact mode, a fine calibration is achieved. Finally, analysis on trap distribution and aging rates at different channel locations are provided.

机译：提出了一个完整的TCAD模型，该模型解决了Flash技术的热载流子退化问题。在强调了对老化动力学具有低指数的幂律并考虑到反映单电子撞击模式的高活化能之后，可以实现精细的校准。最后，提供了在不同通道位置的陷阱分布和老化率的分析。

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《IEEE International Integrated Reliability Workshop Final Report》|2015年|134-137|共4页
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G. Torrente; X. Federspiel; D. Rideau; F. Monsieur; C. Tavernier; J. Coignus; D. Roy; G. Ghibaudo;
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关键词
Flash degradation; HCI degradation; Interface traps; RD model; TCAD modeling; degradation assessment;

机译：闪光降解; HCI降解;界面陷阱; RD模型; TCAD建模;降解评估;

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2. Interface traps density-of-states as a vital component for hot-carrier degradation modeling [J] . S.E. Tyaginov, I.A. Starkov, O. Triebl, Microelectronics & Reliability . 2010,第9a11期

机译：接口捕获状态密度作为热载流子退化建模的重要组成部分
3. Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging [J] . Meng Duan, Jian Fu Zhang, Zhigang Ji, IEEE Transactions on Electron Devices . 2016,第9期

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4. Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution [C] . G. Torrente, X. Federspiel, D. Rideau, IEEE International Integrated Reliability Workshop Final Report . 2015

机译：热载体应力建模：从降解动力学到陷阱分布演化
5. MINORITY CARRIER KINETICS IN DEFECT TRAP DISTRIBUTIONS IN SEMICONDUCTORS: APPLICATION TO TRIGONAL SELENIUM SINGLE CRYSTALS. [D] . SWINEHART, PHILIP ROSS. 1974

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6. Pharmacokinetics and tissue distribution of intraperitoneal 5-fluorouracil with a novel carrier solution in rats [O] . Zhi-Gang Wei, Guo-Xin Li, Xiang-Cheng Huang, 2008

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7. Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging [O] . Duan, M, Zhang, JF, Ji, Z, 2016

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8. Correlation of hot-carrier stress and ionization induced degradation in bipolar transistors [R] . Pease, R. L., Kosier, S. L., Schrimpf, R. D., 1994

机译：双极晶体管中热载流子应力与电离诱导退化的相关性

Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution

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