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IEEE International Integrated Reliability Workshop Final Report

召开年：2014
召开地：S. Lake Tahoe, CA(US)
出版时间：-

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1.Stability and bias stressing of metal/insulator/metal diodes

机译：金属/绝缘子/金属二极管的稳定性和偏置应力
- 作者：{missing}
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2010年
2.Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs

机译：高k /金属栅极MOSFET介电陷阱与BTI特性的相关性
- 作者：{missing}
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2010年
3.Discussion group summary

机译：讨论小组摘要
- 作者：{missing}
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2010年
4.Multiple microscopic defects characterization methods to improve macroscopic degradation modeling of MOSFETs

机译：多种微观缺陷表征方法，提高MOSFET的宏观降解建模
- 作者：{missing}
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2010年
5.On the #x2018;permanent#x2019; component of NBTI

机译：关于NBTI的“永久”组成部分
- 作者：{missing}
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2010年
6.Soft errors — Past history and recent discoveries

机译：软错误 - 过去的历史和最近的发现
- 作者：Slayman Charles
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2010年
7.A new degradation mechanism of gate oxide reliability due to #x0022;extrinsic#x0022; responses of Qbd along rough #x0022;bird's-beak#x0022; frontline

机译：浅析曲折“鸟类”前线QBD的“外在”响应导致的栅极氧化物可靠性的新退化机制
- 作者：Sheng Lieyi;Gerlach Jeff;Glines Eddie
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
- amp;
- #x0022;
- bird's-beakamp;
- #x0022;
- Gate oxide reliability;
- degradation mechanism;
- fontline roughness;
- intrinsic and amp;
- #x0022;
- extrinsicamp;
- #x0022;
- Qbd;
8.User verify and disturb mechanisms in a 65nm flash FPGA

机译：用户验证和干扰65nm闪存FPGA中的机制
- 作者：Jia James Yingbo;Singaraju Pavan;Dhaoui Fethi;Newell Rich;Liu Patty;Micael Habtom;Traas Michael;Sammie Salim;Wang J. J.;Hawley Frank;McCollum John;den Abeelen Werner Van;Hamdy Esmat;Hu Chenming
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
9.TDDB characterization of BST capacitors exhibiting bimodal Weibull distributions

机译：BST电容器的TDDB表征表现出Bimodal Weibull分布
- 作者：Lin H.;Bouyssou E.;Ventura L.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
10.Tutorials

机译：教程
- 作者：Bauza Daniel;Ishihara Ryoichi
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
11.Trapp workshop founding

机译：Trapp研讨会创始
- 作者：(missing)
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
12.Defining reliability specifications for consumer electronic devices

机译：定义消费电子设备的可靠性规范
- 作者：Prasad Chaparala
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
13.From WLR to product reliability and qualifications in the 3D transistor era

机译：从WLR到3D晶体管时代的产品可靠性和资格
- 作者：S. Pae;H. C. Sagong;C. Liu;J. Kim;M. Jin;J. Shim;Y. Kim;J. Jo;J. K. Park;M. Choi;S. Kim;W. Kim;S. Park;S. Shin;J. Park
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
14.Nanoscopic techniques for studying dielectric breakdown and switching induced morphological changes and defects

机译：用于研究介电击穿和切换诱导的形态变化和缺陷的纳米镜技术
- 作者：K. L. Pey
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
15.Impact of gate length and gate oxide thickness on the relationship of FN-stress induced degradation parameters

机译：栅极长度和栅极氧化物厚度对FN应力诱导降解参数关系的影响
- 作者：Kang Y. H.;Lee C. W.;Kim H. U.;Ryu Y. K.;Kim H. S.;Jung T. S.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
16.The effect of fluorine implant on NBTI behaviour in BCD-processes

机译：氟植入物对BCD过程中NBTI行为的影响
- 作者：Olthof Edgar;Combrie Martin;van Marwijk Leo;Claes Jan;Dubois Jerome;Thillaigovindan Jayaraj;Sun Jianhua;Ng William
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
17.Inline process characterization and control for robust BEOL reliability

机译：坚固的BEOL可靠性的内联进程表征和控制
- 作者：Ee Y. C.;Ng W. L.;Tan J. B.;Zhang F.;Shao W.;Chua J. K.;Li H. X.;Lin B. F.;Ng C. W.;Ramanathan E.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
18.An advanced RF-CV method as a powerful characterization tool for the description of HC induced defect generation at microscopic level

机译：一种先进的RF-CV方法作为用于HC引起的微观级别的缺陷产生的强大表征工具
- 作者：Negre L.;Roy D.;Scheer P.;Gloria D.;Ghibaudo G.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
19.Reliability analysis of enhancement-mode GaN MIS-HEMT with gate-recess structure for power supplies

机译：增强模式GaN MIS-HEMT与电源闸门凹槽结构的可靠性分析
- 作者：Imada T.;Motoyoshi K.;Kanamura M.;Kikkawa T.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
20.A practical approach to modeling product performance degradation and assigning lifetime reliability guard band

机译：一种建模产品性能下降和分配寿命可靠性保护频带的实用方法
- 作者：Shah Vishal N.;Tan Yah-Leng;Wong Stephen;Rodes Thomas
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
21.Experimentally based methodology for charge pumping bulk defect trapping correction

机译：基于实验基础的充电泵送散装缺陷捕获校正的方法
- 作者：Ryan J. T.;Southwick R. G.;Campbell J. P.;Cheung K. P.;Young C. D.;Suehle J. S.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
22.Spin dependent charge pumping: A new tool for reliability studies

机译：自旋依赖电荷泵送：可靠性研究的新工具
- 作者：Bittel B. C.;Lenahan P. M.;Ryan J. T.;Fronheiser J.;Lelis A. J.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
23.On-chip circuit for massively parallel BTI characterization

机译：用于大规模平行BTI表征的片上电路
- 作者：da Silva M. B.;Kaczer B.;Van der Plas G.;Wirth G. I.;Groeseneken G.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
24.Joule heating temperature prediction for inductor

机译：焦耳加热温度预测电感器
- 作者：Siegert Laurent;Fiannaca Guillaume;Gautier Gael
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
25.On the microscopic limit of the reaction-diffusion model for the negative bias temperature instability

机译：关于负偏置温度不稳定性的反应扩散模型的显微限
- 作者：Schanovsky Franz;Grasser Tibor
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
26.Cryogenic to room temperature effects of NBTI in high-k PMOS devices

机译：低k PMOS设备中NBTI的低温效应
- 作者：Southwick Richard G.;Purnell Shem T.;Rapp Blake A.;Thompson Ryan J.;Pugmire Shane K.;Kaczer Ben;Grasser Tibor;Knowlton William B.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
27.When does a circuit really fail?

机译：电路什么时候真的失败了？
- 作者：Ryan J. T.;Wei L.;Campbell J. P.;Southwick R. G.;Cheung K. P.;Oates A. S.;Wong H.-S. P.;Suehle J.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
28.Engineering the performance of metal/insulator/metal devices with ALD nanolaminate insulators

机译：用ALD纳米胺绝缘体工程金属/绝缘子/金属装置的性能
- 作者：John F. Conley
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
29.Modeling of hot-carrier degradation in GaN transistors

机译：GaN晶体管中热载波降解的建模
- 作者：Yevgeniy S. Puzyrev
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
30.AgELESS: Aging estimation and lifetime enhancement in silicon systems

机译：Agelation：硅系统中的老化估计和寿命增强
- 作者：Sachin S. Sapatnekar
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
31.Modeling and characterization of hot-carrier stress degradation in power MOSFETs

机译：功率MOSFET热载波应力降解的建模与表征
- 作者：Susanna Reggiani;Elena Gnani;Antonio Gnudi;Giorgio Baccarani;Stefano Poli;Ming-Yeh Chuang;Weidong Tian;Marie Denison
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
32.Defect limited reliability and transport in carbon nanotube and graphene devices

机译：碳纳米管和石墨烯装置中的缺陷有限的可靠性和运输
- 作者：David Estrada
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
33.Foreword

机译：前言
- 作者：Jason Ryan
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
34.Ionizing radiation effects in electronic devices with an emphasis on non-volatile memories

机译：在电子设备中电离辐射效应，重点是非挥发性的记忆
- 作者：Marta Bagatin;Simone Gerardin;Alessandro Paccagnella
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
35.Relaxation-free characterization of Flash programming dynamics along P-E cycling

机译：沿着P-E循环的闪存编程动态的无放松表征
- 作者：Jean Coignus;Alexandre Vernhet;Gilles Reimbold;Giulio Torrente;Sophie Renard;David Roy
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Flash memory;
- endurance;
- fast-measurement;
- programming dynamics;
36.Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

机译：电介质厚度和退火对ZnO TFT的低温沉积高k氧化物的阈值电压不稳定性
- 作者：C. D. Young;R. Campbell;S. Daasa;S. Benton;R. Rodriguez Davila;I. Mejia;M. Quevedo-Lopez
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Al2O3;
- HfO2;
- TFT;
- ZnO;
- threshold voltage instability;
37.FinFET reliability

机译：Finfet可靠性
- 作者：Suresh Uppal
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
38.Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment

机译：用于RRAM纳秒范围切换时间分辨率和可靠性评估的高级1T1R测试车辆
- 作者：Cl??ment Nguyen;Carlo Cagli;Elisa Vianello;Alain Persico;Gabriel Molas;Gilles Reimbold;Quentin Rafhay;G??rard Ghibaudo
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- HfO2;
- RRAM;
- endurance;
- pulsed measurements;
- switching time;
39.Smart-array for pipelined BTI characterization

机译：智能阵列用于流水线BTI表征
- 作者：Vamsi Putcha;Marko Simicic;Pieter Weckx;Bertrand Parvais;Jacopo Franco;Ben Kaczer;Dimitri Linten;Diederik Verkest;Aaron Thean;Guido Groeseneken
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- ???place-and-check???;
- BTI;
- characterization;
- circuit design;
- eMSM;
- pipelining;
- variability;
40.A sampling approach for efficient BEOL TDDB assessment

机译：高效BEOL TDDB评估的采样方法
- 作者：Andrew Kim;Cathryn Christiansen;Baozhen Li;Ernest Wu;Paul McLaughlin
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- BEOL dielectric;
- Reliability;
- Sampling;
- Statistical Variation;
- TDDB measurement;
41.Wafer level test arrays with simple BIST to expedite process development for circuit reliability

机译：晶圆级测试阵列与简单的BIST加快电路可靠性的过程开发
- 作者：M. -H. Hsieh;T. -Y. Yew;Y. -C. Huang;Y. C. Wang;W. Wang;Y. -H. Lee;J. H. Lee
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Circuit Reliability;
- Hot Carrier Injection;
- Negative Bias Temperature Instability;
- Ring Oscillator;
42.Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution

机译：热载体应力建模：从降解动力学到陷阱分布演化
- 作者：G. Torrente;X. Federspiel;D. Rideau;F. Monsieur;C. Tavernier;J. Coignus;D. Roy;G. Ghibaudo
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Flash degradation;
- HCI degradation;
- Interface traps;
- RD model;
- TCAD modeling;
- degradation assessment;
43.Using the charge pumping geometric component to extract NBTI induced mobility degradation

机译：使用电荷泵的几何分量提取NBTI诱导的迁移率劣化
- 作者：Mohamed Boubaaya;Hakim Tahi;Cherifa Tahanout;Boualem Djezzar;Abdelmadjid Benabdelmomene;Amel Chenouf;Djamila Doumaz;Abdelhak Feraht Hemida
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- NBTI;
- OTFIT;
- charge pumping;
- mobility;
44.Novel Charge Pumping method applied to tri-gate MOSFETs for reliability characterization

机译：用于可靠性表征的三栅极MOSFET的新型电荷泵方法
- 作者：B. Bittel;S. Novak;S. Ramey;S. Padiyar;J. T. Ryan;J. P. Campbell;K. P. Cheung
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- 14nm;
- Fin-FET;
- High-k;
- Hot Carrier Injection;
- charge pumping;
- metal gate;
- reliability;
45.Combined Vramp and TDDB analysis for gate oxide reliability assessment and screening

机译：栅极氧化物可靠性评估和筛选组合VRAMP和TDDB分析
- 作者：T. E. Kopley;M. Ring;C. Choi;J. Colbath
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
46.Aging model challenges in deeply scaled tri-gate technologies

机译：老龄化模型在深度缩放三门技术中的挑战
- 作者：S. Ramey;Y. Lu;I. Meric;S. Mudanai;S. Novak;C. Prasad;J. Hicks
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- BTI;
- FinFET;
- aging;
- hot carrier;
- modeling;
- reliability;
- trigate;
- variation;
47.Constant voltage electromigration testing

机译：恒压电迁移测试
- 作者：Lloyd J. R.;Connelly N.;Zhang Z.;Rizzolo M.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
48.Product dielectric reliability

机译：产品介质可靠性
- 作者：Lee J. K. Jerry;Pai S. Y.;Chang K. P.;Hsu Nan-Feng;Juan Alex;Su K. C.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
49.Hot Carrier Injection degradation induced dispersion: Model and circuit-level measurement

机译：热载体注射降解诱导分散：模型和电路电平测量
- 作者：Cacho F.;Singh S. K.;Singh B.;Parthasarathy C.;Pion E.;Argoud F.;Federspiel X.;Pitolet H.;Roy D.;Huard V.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
50.Hot-carrier and recovery effect on p-channel lateral DMOS

机译：对P沟道横向DMOS的热载波和恢复效果
- 作者：Aresu S.;Vollertsen R.-P.;Rudolf R.;Schlunder C.;Reisinger H.;Gustin W.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
51.Electron paramagnetic resonance studies of interlayer dielectrics

机译：层间电介质的电子顺磁共振研究
- 作者：Bittel B. C.;Pomorski T. A.;Lenahan P. M.;King S.;Mays E.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
52.Reliability degradation of MOS transistors originated from plasma process-induced charging of circuit blocks and detected with fWLR methods

机译：MOS晶体管的可靠性降解源自等离子体处理诱导的电路块充电，并用FWLR方法检测
- 作者：Martin Andreas;Wagner Cajetan;Koten Andreas;Schwerd Markus
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
53.Reliability and degradation mechanism of 0.25 #x00B5;m AlGaN/GaN HEMTs under RF stress conditions

机译：RF应力条件下0.25μmAlgan/ GaN Hemts的可靠性和降解机制
- 作者：Dammann M.;Baeumler M.;Gutle F.;Casar M.;Walcher H.;Waltereit P.;Bronner W.;Muller S.;Kiefer R.;Quay R.;Mikulla M.;Ambacher O.;Graff A.;Altmann F.;Simon M.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
54.Separating NBTI and PBTI effects on the degradation of Ring Oscillator frequency

机译：分离NBTI和PBTI对环形振荡器频率的劣化的影响
- 作者：Linder Barry P.;Kim Jae-Joon;Rao Rahul;Jenkins Keith;Bansal Aditya
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
55.Effects of pre-stress on hot-carrier degradation of N-channel MOSFETs

机译：预应力对N沟道MOSFET热载体降解的影响
- 作者：Kopley T. E.;OConnell B.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
56.Oxide defects and reliability of high K/Ge and III???V based gate stacks

机译：高K / GE和III的氧化物缺陷和可靠性V基于V的栅极堆叠
- 作者：John Robertson;Yuzheng Guo
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Ge;
- III???V channels;
- Oxide defects;
57.Memory yield and lifetime estimation considering aging errors

机译：考虑老化错误的记忆产量和寿命估计
- 作者：Dae-Hyun Kim;Linda S. Milor
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
58.Solid-State-Drive qualification and reliability strategy

机译：固态驱动资格和可靠性策略
- 作者：Todd A. Marquart
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- HDD;
- NAND;
- SSD;
- qualification;
- reliability;
- solid state drive;
- strategy;
- system;
59.Charge-based stochastic aging analysis of CMOS circuits

机译：CMOS电路的基于电荷的随机老化分析
- 作者：Theodor Hillebrand;Nico Hellwege;Nils Heidmann;Steffen Paul;Dagmar Peters-Drolshagen
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
60.Polysilicon resistor degradation - modeling and mechanism

机译：多晶硅电阻降解 - 建模与机制
- 作者：Sankaran Jayanarayanan
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Joule Heating;
- Physical Mechanism;
- Polysilicon Resistor;
- Statistical Modeling;
61.Advanced MOSFET variability and reliability characterization array

机译：高级MOSFET可变性和可靠性表征阵列
- 作者：M. Simicic;V. Putcha;B. Parvais;P. Weckx;B. Kaczer;G. Groeseneken;G. Gielen;D. Linten;A. Thean
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
62.Comparison between recoverable and permanent NBTI variability components

机译：可恢复与永久性NBTI变异分量的比较
- 作者：M. Rafik;X. Federspiel;D. Nouguier;G. Ghibaudo
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- BTI;
- modeling;
- permanent component;
- recoverable component;
- statistical study;
- variability;
63.Radiation testing of tantalum oxide-based resistive memory

机译：钽氧化物基电阻记忆的辐射测试
- 作者：Joshua Holt;Nathaniel Cady;Jean Yang-Scharlotta
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- RRAM;
- memory;
- radiation;
- resistive memory;
- tantalum oxide;
64.Reliability aging and modeling of chip-package interaction on logic technologies featuring high-k metal gate planar and FinFET transistors

机译：高k金属闸板平面和FINFET晶体管特征逻辑技术芯片包交互的可靠性老化和建模
- 作者：Jen-Hao Lee;Eliot S. H. Chen;Yung-Huei Lee;Chun-Hung Lin;Chun-Yu Wu;Ming-Han Hsieh;Kevin Huang;Jhong-Sheng Wang;Yung-Sheng Tsai;Ryan Lu;Jiaw-Ren Shih
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- BTI;
- CPI;
- FEM;
- FinFET;
- HCI;
- HK/MG;
- mobility;
65.Extraction of interface and border traps in beyond-Si devices by accounting for generation and recombination in the semiconductor

机译：通过在半导体中占Grays和Rofombination的超超SI设备中的接口和边界陷阱的提取
- 作者：Gabriele Sereni;Luca Larcher
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- CV simulations;
- GV simulations;
- Generation;
- Germanium;
- High-k;
- III???V;
- Recombination;
66.Reliability challenges in resistive switching memories technology

机译：电阻切换存储器技术中的可靠性挑战
- 作者：S. Deora
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Low resistance state (LRS);
- high resistance state (HRS);
67.Defect-centric perspective of combined BTI and RTN time-dependent variability

机译：以BTI和RTN时间依赖性变异性为中心的视角
- 作者：P. Weckx;B. Kaczer;J. Franco;Ph. J. Roussel;E. Bury;A. Subirats;G. Groeseneken;F. Catthoor;D. Linten;P. Raghavan;A. Thean
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- BTI;
- RTN;
- defects;
- time dependent variability;
68.Impact of STI stress on hot carrier degradation in 5V NMOSFET

机译：STI应力对5V NMOSFET在热载体降解的影响
- 作者：Jiang Hao;Yap Hin Kiong;Pandey Shesh Mani;Park Jae Soo;Lim James;Zeng Xu
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
69.Generation of single-and double-charge electron traps in tunnel oxide of flash memory cells under Fowler-Nordheim stress

机译：在Fowler-Nordheim应力下闪存单元的隧道氧化物中的单电和双电荷电子陷阱产生
- 作者：Tkachev Yuri;Kotov Alexander
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
70.High endurance performance of 1T1R HfOx based RRAM at low (#x003C;20#x03BC;A) operative current and elevated (150#x00B0;C) temperature

机译：高耐久性性能为1T1R HFO X / INF>在低（<20μA）的摩擦电流下的RRAM和升高（150°C）温度
- 作者：Butcher B.;Koveshnikov S.;Gilmer D. C.;Bersuker G.;Sung M. G.;Kalantarian A.;Park C.;Geer R.;Nishi Y.;Kirsch P. D.;Jammy R.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
71.On the PBTI degradation of pMOSFETs and its impact on IC lifetime

机译：论PMOSFET的PBTI降解及其对IC寿命的影响
- 作者：Schlunder Christian;Reisinger Hans;Aresu Stefano;Gustin Wolfgang
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
72.Modeling of DCIV recombination currents using a multistate multiphonon model

机译：多态多光模型模拟DCIV重组电流的建模
- 作者：Bina M.;Aichinger Th.;Pobegen G.;Gos W.;Grasser T.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
73.Comparison of random telegraph noise, endurance and reliability in amorphous and crystalline hafnia-based ReRAM

机译：无定形和结晶哈夫尼亚皇家纪念品随机电报噪声，耐力和可靠性的比较
- 作者：Karsten Beckmann;Joshua S. Holt;Nathaniel C. Cady;Joseph Van Nostrand
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- CBRAM;
- RTN;
- ReRAM;
- endurance;
74.On the temperature behavior of hot-carrier degradation

机译：关于热载体降解的温度行为
- 作者：S. Tyaginov;M. Jech;P. Sharma;J. Franco;B. Kaczer;T. Grasser
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
75.Decay of magnetoresistance in a low-k dielectric upon application of electrical bias and temperature stress

机译：在施加电偏压和温度胁迫时，低k电介质中的磁阻衰减
- 作者：Brian T. McGowan;James R. Lloyd;Anne M. Kennedy
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Negative Magnetoresistance;
- TDDB;
76.Investigation of the reliability degradation of scaled SONOS memory transistors

机译：缩放SONOS存储器晶体管可靠性降解的研究
- 作者：J. Ocker;S. Slesazeck;R. Hoffmann;V. Beyer;A. Skouris;R. Srowik;S. Buschbeck;S. G??nther;T. Mikolajick
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Electrical Simulation Gate Leakage Current;
- Reliability;
- Retention after Cycling;
- SONOS Memory Transistor;
77.Field-induced generation of electron traps in the tunnel oxide of flash memory cells

机译：闪存单元隧道氧化物中的野外电子阱的产生
- 作者：Yuri Tkachev
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Flash memory;
- electron trapping;
- electron tunneling;
- floating gate;
- memory reliability;
- oxide degradation;
- program-erase cycling endurance;
78.Study of the impact of dielectric aging on coplanar waveguide performance

机译：介电老化对共面波导性能的影响研究
- 作者：Anh Phuong Nguyen;Ulrike L??ders;Frederic Voiron
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Coplanar waveguide (CPW);
- characteristic impedance;
- charges;
- dielectric stress;
- line loss;
- mobile ions;
79.The strength of BEOL structures fabricated using low K materials and its impact on CPI failures

机译：使用低K材料制造的BEOL结构的强度及其对CPI故障的影响
- 作者：T. M. Shaw;X-H Liu;E. Misra;D. Questad;G. Bonilla;T. Wassick;M. Lamorey;H. Shobha;G. Osborne;D. Kioussis;J. Wright;R. Bisson;I. Paquin;S. S. Bouchard;S. Tetreault;D. Stone;C. Muzzy;B. Sundlof;T. Daubenspeck
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Low K;
- Strength;
- cracking;
- interconnect;
- package;
80.Massively parallel TDDB testing: SiC power devices

机译：大规模并行TDDB测试：SIC电源设备
- 作者：Z. Chbili;J. Chbili;J. P. Campbell;J. T. Ryan;M. Lahbabi;D. E. Ioannou;K. P. Cheung
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
- Activation energy;
- Field acceleration;
- Massively parallel reliability system;
- Reliability testing;
- SiC;
- TDDB;
81.NBTI stress on power VDMOS transistors under low magnetic field

机译：低磁场下功率VDMOS晶体管的NBTI应力
- 作者：Cherifa Tahanout;Hakim Tahi;Mohamed Boubaaya;Boualem Djezzar;Mohamed Marah;Becharia Nadji;Nadia Saoula
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
82.Charge feedback mechanisms at forward threshold voltage stress in GaN/AlGaN HEMTs

机译：GaN / AlgaN Hemts中的前阈值电压应力的充电反馈机制
- 作者：A. Grill;G. Rzepa;P. Lagger;C. Ostermaier;Hajdin Ceric;T. Grasser
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
83.Further understandings on impacts of La incorporation in HfSiON/TiN nFETs through comprehensive random telegraph noise characterizations

机译：通过综合随机电报噪声表征，进一步了解La Incorpation在HFSION / TIN NFET中的影响
- 作者：Jiezhi Chen;Yuichiro Mitani
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
84.Experimental characterization of the interactions between HCI, off-state and BTI degradation modes

机译：HCI，脱态和BTI降解模式的相互作用的实验表征
- 作者：Federspiel X.;Cacho F.;Roy D.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
85.Effects of current density on electromigration resistance trace analysis

机译：电流密度对电迁移电阻痕量分析的影响
- 作者：Bana F.;Arnaud L.;Ney D.;Galand R.;Wouters Y.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
86.Observation of negative bias temperature instabilities in parasitic p-channel MOSFETs occurring during high-temperature reverse-bias stressing of trench-gated n-channel MOSFETs

机译：在沟槽门控N沟道MOSFET的高温反向偏置应力期间发生寄生P沟道MOSFET中负偏置温度稳定性的观察
- 作者：Hao Jifa;Rioux Mark;Awadelkarim Osama O.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
87.TCAD analysis of breakdown during voltage sweep in a carbon nanofiber (CNF) interconnect

机译：碳纳米纤维（CNF）互连电压扫描期间的TCAD分析
- 作者：Brunton J.;Yamada T.;Weatherford T.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
88.TCAD-based failure analysis and modeling of pit formation in GaN HEMTs

机译：基于TCAD的GAN HEMTS坑形成故障分析与建模
- 作者：Seigenthaler T.;Weatherford T.;Porter M.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2011年
89.Influence of MOSFET geometry on the statistical distribution of NBTI induced parameter degradation

机译：MOSFET几何对NBTI诱导参数劣化统计分布的影响
- 作者：Christian Schl??nder;Fabian Proebster;J??rg Berthold;Wolfgang Gustin;Hans Reisinger
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2015年
90.From COTS to space grade electronics-improving reliability for Harsh environments

机译：从尖端到空间等级电子产品 - 提高恶劣环境的可靠性
- 作者：Baumann Robert
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2014年
91.Bit error rate engineering for spin-transfer-torque MRAM

机译：旋转转移扭矩MRAM的误码率工程
- 作者：Lee Ken
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2014年
92.The magic of lasers in entertainment — Behind the technology

机译：娱乐中激光的魔力 - 技术背后
- 作者：Suehle John S.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2014年
93.III-V nanowire MOSFETs

机译：III-V纳米线MOSFET
- 作者：Wernersson Lars-Erik
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2014年
94.Fundamental material aspects of thermal-mechanical-electrical reliability of low-k dielectric materials and Cu interconnects

机译：低k介电材料和Cu互连热机电可靠性的基本材料方面
- 作者：King Sean
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2014年
95.FEOL reliability

机译：感到可靠性
- 作者：Liao Jean
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2014年
96.Accelerateci testing — How fast is too fast?

机译：加速测试 - 太快了？
- 作者：McPherson J.W.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2014年
97.Evaluation of variability and RTN in scaled RRAM

机译：缩放RRAM中变异性和RTN的评估
- 作者：Veksler Dmitry;Bersuker G.;Butcher B.;Gilmer D.;Matthews K.;Deora S.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2014年
98.Re-investigation of hydrogen-related defect generation in gate dielectric interface and bulk

机译：栅极电介质界面和散装中氢相关缺陷产生的重新研究
- 作者：Mitani Yuichiro;Hirano Izumi;Suzuki Masamichi;Nakasaki Yasushi;Kato Koichi;Matsushita Daisuke;Satake Hideki;Toriumi Akira
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2014年
99.Use of polymer and plastic materials in electronics applications from the reliability point of view

机译：从可靠性地区使用电子应用中的聚合物和塑料材料
- 作者：Frisk Laura;Kiilunen J.;Saarinen K.;Lahokallio S.;Mostofizadeh M.;Pippola J.;Maritila T.
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2014年
100.Defects in MoS2 and other TMDs: Impact on device performance and variability

机译：MOS 2 等TMDS中的缺陷：对设备性能和变化的影响
- 作者：Hinkle Chris
- 会议名称：《IEEE International Integrated Reliability Workshop Final Report》 | 2014年