Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution

机译：热载体应力建模：从降解动力学到陷阱分布演化

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A complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented. After having underlined the need for a power law with a low exponent for the aging kinetics and considered a high activation energy reflecting the single electron impact mode, a fine calibration is achieved. Finally, analysis on trap distribution and aging rates at different channel locations are provided.

机译：提出了一种完整的TCAD模型，用于解决Flash技术的热载波降低。在下划线下划线后，对老化动力学的低指数的功率法，并且考虑了反射单电子冲击模式的高激活能量，实现了精细校准。最后，提供了对不同通道位置处的陷阱分布和老化速率分析。

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《IEEE International Integrated Reliability Workshop Final Report》|2015年||共4页
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G. Torrente; X. Federspiel; D. Rideau; F. Monsieur; C. Tavernier; J. Coignus; D. Roy; G. Ghibaudo;
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中图分类微电子学、集成电路（IC）;
关键词
Flash degradation; HCI degradation; Interface traps; RD model; TCAD modeling; degradation assessment;

机译：闪存劣化;HCI劣化;界面陷阱;RD模型;TCAD建模;降级评估;

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2. Interface traps density-of-states as a vital component for hot-carrier degradation modeling [J] . S.E. Tyaginov, I.A. Starkov, O. Triebl, Microelectronics & Reliability . 2010,第9a11期

机译：接口捕获状态密度作为热载流子退化建模的重要组成部分
3. Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging [J] . Meng Duan, Jian Fu Zhang, Zhigang Ji, IEEE Transactions on Electron Devices . 2016,第9期

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4. Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution [C] . G. Torrente, X. Federspiel, D. Rideau, IEEE International Integrated Reliability Workshop Final Report . 2015

机译：热载流子应力模型：从降解动力学到陷阱分布演变
5. MINORITY CARRIER KINETICS IN DEFECT TRAP DISTRIBUTIONS IN SEMICONDUCTORS: APPLICATION TO TRIGONAL SELENIUM SINGLE CRYSTALS. [D] . SWINEHART, PHILIP ROSS. 1974

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6. Pharmacokinetics and tissue distribution of intraperitoneal 5-fluorouracil with a novel carrier solution in rats [O] . Zhi-Gang Wei, Guo-Xin Li, Xiang-Cheng Huang, 2008

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7. Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging [O] . Duan, M, Zhang, JF, Ji, Z, 2016

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8. Correlation of hot-carrier stress and ionization induced degradation in bipolar transistors [R] . Pease, R. L., Kosier, S. L., Schrimpf, R. D., 1994

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Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution

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