RF performance of InGaAs-based T-gate junctionless field-effect transistors which applicable for high frequency network systems

摘要

The T-gate InGaAs-based JLFET's which has high frequency RF characteristics have been demonstrated by TCAD tool. To achieve advanced performance of RF characteristics, the T-gate structure is applied, also. By T-gate structure we decrease gate resistance (R) and achieve a higher maximum oscillation frequency (f) compare with planar-type structure. However, the increase of parasitic gate capacitance degrades current gain cut-off frequency (f) and this trade-off between parasitic components and optimal device structure will be discussed.