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Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance
Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance
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机译:具有改善的直流和高频性能的化合物半导体场效应晶体管的制造方法
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摘要
A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co- implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n- MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n- channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si- channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.
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