METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR HAVING ENHANCED HIGH-FREQUENCY PERFORMANCE

摘要

A MOSFET device includes an epitaxial region disposed on an upper surface of a substrate, the substrate serving as a drain region in the MOSFET device, and at least two body regions formed in the epitaxial region. The body regions are disposed proximate an upper surface of the epitaxial region and spaced laterally apart. The device further includes at least two source regions disposed in respective body regions, proximate an upper surface of the body regions, and a gate structure including at least two planar gates and a trench gate. Each of the planar gates is disposed on the upper surface of the epitaxial region and overlaps at least a portion of a corresponding body region. The trench gate is formed partially through the epitaxial region and between the body regions.