Strained SiGe layer grown on microring-patterned substrate for silicon-based light-emitting devices

摘要

A silicon light emitter operating in 1-1.6 μm wavelength range is realized by growth of strained SiGe layer on microring-patterned silicon-on-insulator substrates by molecular beam epitaxy. Strong resonance peaks are observed in the microphotoluminescence spectrum at 5 K and 295 K. The quality factor is of the order of 10~3. The mode indexes and profiles of these whispering-gallery modes are computed through numerical simulation. Significant enhancement of photoluminescence from SiGe layer by microring resonators is attributed to the Purcell effect. Our process provides an enlightening way to fabricate defect-free silicon-based light emitters, and will be further improved in the future.