Structural properties of tensily strained Si layers grown on SiGe(100), (110), and (111) virtual substrates

摘要

We have studied the structural properties of tensily strained Si (t-Si) layers grown by reduced pressure-chemical vapor deposition on top of SiGe(100), (110), and (111) virtual substrates (VSs). Chemical mechanical planarization has been used beforehand to eliminate the as-grown surface Crosshatch on all orientations and reduce by 10 up to 100 times the surface roughness. A definite surface roughening has occurred after the epitaxy of t-Si on (110) and (111). For the lowest Ge contents investigated, top Si(100) and (110) layers are locally "defect-free" whereas numerous {111} stacking faults are present in the t-Si(111) layers. For higher Ge content SiGe VS, a degradation of the crystallographic quality of (110) and (111) t-Si layers has been evidenced, with the presence of dislocations, stacking faults, and twins. Quantification of the strain level in the t-Si layers has been carried out using visible and near-UV Raman spectroscopy. The Ge contents in the VS determined by Raman spectroscopy were very close to the ones previously obtained by secondary ion mass spectrometry or x-ray diffraction. Stress values obtained for t-Si(100) layers were whatever the Ge content similar to those expected. Stress values corresponding to pseudomorphic t-Si growths have been obtained on (110) and (111) SiGe VSs, for Ge contents up to 35% and 25%, respectively. The stress values obtained on (110) surfaces for such Ge contents were high, with a noticeable anisotropy along the [001] and [1-10] directions. Degradations of the (110) and (111) Raman profiles likely coming from twin-assisted strain relaxation have been noticed for t-Si layers on SiGe VS with Ge contents higher than 35% and 25%, respectively. UV and visible Raman mapping of the growth plane strain fluctuations has finally been carried out. Original surface arrays have been highlighted for each surface orientation. Such strain fields are related to the plastic relaxation of strain in the SiGe graded layer underneath through the emission of misfit dislocations, twins, and stacking faults. Promising results have been obtained for f-Si layers on (110) SiGe VS while the technological usefulness of the (111) ones is more questionable.