Structural properties of tensile-strained Si layers grown on Si{sub}0.6Ge{sub}0.4 and Si{sub}0.5Ge{sub}0.5 virtual substrates

摘要

We have studied the structural properties of tensile-strained Si (sSi) layers grown on polished Si{sub}0.6Ge{sub}0.4 and Si{sub}0.5Ge{sub}0.5 virtual substrates as a function of their thickness. The surface morphology, the tensile-strain, the linear density of defects and the threading dislocation density have been quantified for different growth conditions and sSi layer thickness.