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Graphene-ZnO:N Schottky junction based thin film transistor

机译:Graphene-ZnO:N肖特基结基薄膜晶体管

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Novel thin film transistor based on a graphene-ZnO Schottky junction has been demonstrated for display driver circuit applications. High transmittance over 80% in visible light wavelengths with a high on-off ratio over 10~4 are the merits of this device. All device fabrication processes completed at a temperature below 200°C will provide a unique advantage in the flexible display applications. The projected performance estimated by PSPICE using the experimental device parameters confirmed that this device is suitable for voltage programming pixel driver circuits.
机译:基于石墨烯-ZNO肖特基结的新型薄膜晶体管已经证明了显示驱动电路应用。在10〜4上具有高开关比率的可见光波长的高透射率为80%,是该装置的优点。在低于200°C的温度下完成的所有器件制造过程将在柔性显示器应用中提供独特的优势。使用实验装置参数的PSPICE估计的预计性能证实了该设备适用于电压编程像素驱动电路。

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