Characteristics of polycrystalline silicon Schottky barrier thin film transistors fabricated using metallic junction source/drain with erbium silicide and platinum silicide

摘要

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFTs) were fabricated using platinum and erbium silicided source/drain for p- and n-channel SB-TFTs, respectively. High quality poly-Si films were obtained by crystallizing the amorphous Si films with the excimer laser annealing method. Poly-Si SB-TFTs with metallic source/drain junctions showed a large on/off current ratio and a low leakage current. Significant improvements in electrical characteristics were obtained by additional forming gas annealing in 2% H_2/N_2 gas ambient due to the termination of dangling bonds at the grain boundaries of the poly-Si film as well as the reduction in interface trap states at gate oxide/poly-Si channel.