New type of high power pulse semiconductor laser based on epitaxially-integrated AlGaAs/GaAs thyristor heterostructure

摘要

We present the latest theoretical and experimental results on nonlinear dynamic characteristics of laser-thyristor. We have experimentally demonstrated 4MHz/4.5W high frequency lasing of laser-thyristor in 890-910 nm spectral range. The minimum values of the energy and amplitude of the control current density pulse required to turn on 28 W peak output optical power of laser-thyristor were 1.4 nJ and 0.6 A/cm, respectively.