Visible-Spectrum (lambda = 65O nm) Photopumped (Pulsed, 300 K) Laser Operation ofa Vertical-Cavity AlAs-AlGaAs/InAlP-InGaP Quantum Well Heterostructure Utilizing Native Oxide Mirrors

摘要

Data are presented on the 300 K photopumped (pulsed) laser operation of a visible-spectrum (lambda=650 nm) AlAs-AlGaAs/InAlP-InGaP quantum-well heterostructure (QWH) crystal that utilizes high-index-contrast AlAs-native-oxide/Al0.6Ga0.4As distributed Bragg reflector mirrors. The mirrors are formed by the lateral oxidation (H2O+N2, 425 deg C) of two sets of four 'buried' AlAs layers that are separated by Al0.6Ga0.4As. These mirrors, which create a high-Q cavity in the vertical direction, 'sandwich' a one-wavelength InAlP-InGaP QW active region, thus forming a compact microcavity that 'tunes' the carrier scattering and recombination into a narrow spectrum (approx. 25 A) and supports laser operation in the vertical direction.