Effect of high-pressure deuterium oxide annealing on Al2O3 deposited by plasma-assisted atomic layer deposition at low temperature

摘要

Al2O3 thin films were deposited by plasma-assisted atomic layer deposition (PA-ALD), which can have the advantage of low temperature process. Then high pressure deuterium oxide annealing (HPDOA) was performed for reforming qualities of the PA-ALD Al2O3. The leakage current and the breakdown field of metal-oxide-semiconductor capacitors with the Al2O3 film as the gate insulator were improved after HPDOA. In this study, HPDOA is found to be useful for reforming the Al2O3 thin film even if it was deposited by PA-ALD.