Method of Depositing Silicon Oxide Film by Plasma Enhanced Atomic Layer Deposition at Low Temperature

摘要

The present invention relates to a method of forming a silicon oxide (SiO 2) film on a resist pattern or an etched line on a substrate by plasma enhanced atomic layer deposition (PEALD)₂A method of depositing a thin film, comprising: a first step of forming a resist pattern or an etched line on a substrate in a PEALD reactor; A second step of controlling the temperature of the susceptor on which the substrate is located to be 50 or lower as a deposition temperature; A silicon-containing precursor and an oxygen-feeding reactant are introduced into the PEALD reactor while the deposition temperature is stably controlled at a temperature of 50 C or lower, RTI ID = 0.0 SiO2 & ₂A third step of forming an atomic layer on the resist pattern or the etched line; And repeating the cycle at a constant temperature to form a resist pattern on the resist pattern or the etched line,₂Forming a resist pattern on the substrate or an etched line on the substrate,₂To a method of depositing a thin film.