METHOD OF DEPOSITING SILICON OXIDE FILM BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION AT LOW TEMPERATURE

摘要

PROBLEM TO BE SOLVED: To provide a process for depositing a film on a substrate by Plasma-Enhanced Atomic Layer Deposition (PEALD) method in which an organic layer on the substrate is not damaged.;SOLUTION: A method of depositing a silicon oxide layer on a resist pattern or etched lines formed on a substrate by PEALD includes steps of providing a substrate on which a resist pattern or etched lines are formed in a PEALD reactor; controlling a temperature of a susceptor on which the substrate is disposed at lower than 50°C as a deposition temperature; introducing a silicon-containing precursor and an oxygen-supplying reactant gas to the PEALD reactor while the deposition temperature is maintained substantially or nearly at a constant temperature of lower than 50°C, thereby depositing a silicon oxide atomic layer on the resist pattern or etched lines; and repeating the cycle multiple times substantially or nearly at the constant temperature to deposit a silicon oxide atomic layer on the resist pattern or etched lines.;COPYRIGHT: (C)2011,JPO&INPIT