High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal–Organic Silicon Precursor and Oxygen Radical

摘要

Recently, $hbox{SiO}_{2}$ grown at low temperatures has been highlighted for a range of applications. In this letter, $hbox{SiO}_{2}$ films were deposited at 280 $^{circ}hbox{C}$ by plasma-enhanced atomic layer deposition (ALD) using bis-diethylamino-silane and $hbox{O}_{2}$ plasma. The electrical conduction mechanisms of a 38-nm-thick $hbox{SiO}_{2}$ film were found to be ohmic and Fowler–Nordheim tunneling in the low- and high-voltage ranges, respectively. The electrical breakdown field of the silicon oxide films was measured at $sim$10 MV/cm. The excellent breakdown field was well explained by the fact that ALD $ hbox{SiO}_{2}$ has very low carbon content ($< $ 0.5%) and does not have any oxygen deficiency and nonbridging oxygen. Compared to wet $hbox{SiO}_{2}$, the increase in etch rates was attributed to the existence of strained bonds.