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机译:使用等离子增强原子层沉积的高k /金属栅极晶体管的低温氧化硅偏移垫片
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;
rnProcess Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;
rnProcess Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;
rnProcess Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;
rnProcess Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;
rnProcess Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;
rnProcess Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;
rnProcess Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;
机译:低温原子层沉积生长氧化物间隔物的多金属栅晶体管的表征
机译:金属-有机硅前驱体和氧自由基通过等离子体增强原子层沉积获得的高质量低温氧化硅
机译:通过等离子体增强原子层沉积来研究高k ZrO2 / SiO2堆叠栅极绝缘体的界面特性,以提高insnzno薄膜晶体管的性能
机译:高k HfAlO栅极介电层的原子层沉积(ALD)功能增强了AlGaN / GaN金属氧化物半导体异质结场效应晶体管(MOSHFET)的性能
机译:镧基氧化物的原子层沉积,用于高K栅极电介质应用。
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积