CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN

摘要

The method of depositing a silicon oxide layer on a substrate is disclosed. The method may include the step of injecting the atomic oxygen precursor includes providing a substrate in a deposition chamber, generating the atomic oxygen precursor outside the deposition chamber, and the chamber. In addition, the methods may include a step of injecting a silicon precursor to the deposition chamber, the silicon precursor and the atomic oxygen precursor are mixed in the first chamber. The silicon precursor and the atomic oxygen precursor reacts to form a silicon oxide layer on the substrate, depositing a silicon oxide layer may be annealed. In addition, systems are also disclosed for depositing a silicon oxide layer on the substrate.