A novel PIN switch diode integrating with 0.18um SiGe HBT BiCMOS process

摘要

A novel structure PIN switch diode which is integrated into SiGe HBT BiCMOS process was reported in this paper. In this PIN device, an n-type pseudo buried layer (PBL) under STI is adopted as N region and the heavily doped extrinsic base of SiGe NPN HBT is used as P region. The pseudo buried layer is picked up by a deep contact through field oxide. An extra implantation (PIN implantation) is introduced into I region. Key parameters such as the size of active area, space from PBL to active area and energy & dose of PIN implant are obtained by simulation for PIN performance optimization. The demonstrated performance of this PIN diode exhibits an insertion loss as -0.56dB & an isolation loss as -22.26dB under 2.4Ghz frequency, and the BV can achieve 19V, which meets the requirement of PIN diode applied as switch in WiFi.